preliminary mg75 hf1 2 c1 compl i ant rohs absolute maximum ratings t c = 25 unless otherwise specified symbol description values units v ces collector - emitter voltage 1 2 00 v v ges gate - emitter voltage 20 v i c dc collector current t c =25 150 a t c =80 75 a i cm(1 ) peak collector current repetitive t j = 1 25 150 a i f diode continuous forward current t j = 125 75 a i fm peak fwd current repetitive 150 a t sc short circuit withstand time >10 s p d maximum power dissipation (igbt) t c = 25 , t jmax =150 625 w t j maxi mum junction temperature 150 t jop operating temperature - 40 ~ +150 t stg storage temperature - 40 ~ +125 viso isolation voltage (all terminals shorted) f=50hz, 1min 3000 v mounting torque power terminals screw:m5 5 n*m mounting screw:m6 6 n*m notes : (1) repetitive rating: pulse width limited by max. junction temperature igbt modules v ces 1 2 0 0v i c 75a features ? short circuit rated 10 s ? low stray inductance ? low saturation voltage ? ultra low loss ? hi - rel power terminals ? lead free, compliant with r o hs requirement circuit applications ? industrial inverters ? servo appl ications ? smps ups ? induction heating ? welder s - m0 86 www. 21yangjie .com rev.2.0, 27 - may - 17 1
preliminary mg75 hf1 2 c1 compl i ant rohs electrical characteristics of igbt (t j = 25 unless otherwise specified ) symbol item conditions values units min. typ. max. off characteristics v (br)ces collector - emitter breakd own voltage v ge = 0v, i c = 1ma 1200 v i ce s collector leakage current v ce = v ces , v ge =0v, 1 00 u a v ce = v ces , v ge =0v, t j =125c 1 ma i ges gate leakage current v ce =0v, v ge =20v - 400 400 na o n characteristics v ge(th) gate - emitter threshold voltage v ce =v ge , i c = 3 ma 5 6.2 7 v v ce(sat) collector ? emitter saturation voltage i c = 75 a,v ge =15v 1.8 v i c = 75 a , v ge =15v, t j =125c 2 v dynamic characteristics c ies input capacitance v ce = 25v, v ge = 0v , f 1mhz 5.5 nf c o es output capacitance 0.4 nf switching characteristics t d(on) turn - o n delay time v cc = 6 00v, i c = 75 a , r g = 15 ?, v ge =15v , inductive l oad , t j = 25 150 ns t r rise time 70 ns t d(off) turn - o ff delay time 440 ns t f fall time 60 ns e on turn - o n switching loss 7.45 mj e off turn - o ff switching loss 4.9 mj t d(on) turn - o n delay time v cc = 6 00v, i c = 75 a , r g = 15 ?, v ge =15v , inductive l oad, t j = 1 25 160 ns t r rise time 65 ns t d(off) turn - o ff delay time 500 ns t f fall time 70 ns e on turn - o n switching loss 10.3 mj e off turn - o ff switching loss 7.8 mj q ge gate charge v cc = 6 00v, i c = 75 a , v ge =15v 780 nc rbsoa reverse bias safe operating area i c = 150 a ,v cc = 60 0v, v p =1 2 00v, rg = 15 ? , v ge =+15 v to 0v, t j = 150c trapezoid scsoa short circuit safe operating area v cc = 6 00v, v ge = 15v, t j = 150 10 s s - m0 86 www. 21yangjie .com rev.2.0, 27 - may - 17 2
preliminary mg75 hf1 2 c1 compl i ant rohs electrical characte ristics of fwd t c = 25 unless otherwise specified r jc junction - to - case (igbt part, per leg) 0.2 /w r jc junction - to - case (diode part, per leg) 0. 5 /w r cs case - to - sink (conductive grease applied) 0.1 /w m power terminals screw : m 5 3 5 nm m mounting screw : m 6 4 6 nm weight weight of module 150 160 g performance curves symbol item conditions values units min . typ. max. v fm forward voltage i f 75 a, v ge = 0v t j = 25 2 v t j = 125 1.7 t rr reverse recovery time i f 75 a, di/dt = 140 0 a/ s, v rr = 6 00v, v ge = - 15v t j = 25 160 ns t j = 125 200 i rr peak reverse recovery current t j = 25 55 a t j = 125 70 q rr reverse recovery charge t j = 25 5.3 c t j = 125 8.2 fig1. typical output characteristics fig2 . typical transfer characteristics 0 v ce(sat) 1 2 v 3.5 150 a 75 i c 0 0 v ge 4 8 v 14 15 0 a 75 i c 0 t j =25 t j = 1 25 v ce =20v t j =125 t j =125 s - m0 86 www. 21yangjie .com rev.2.0, 27 - may - 17 3
preliminary m g 75 hf 1 2 c 1 compl i ant rohs fig3. switching energy vs. collector current fig4. switching energy vs. gate resistor 0 i c 50 100 a 1 75 e on 60 mj 30 e on e off 0 v ge = 15v v cc =600v r g =15 t j =125 30 mj 15 e on e off 0 0 r g 20 40 v ge = 15v v cc =600v i c =75a t j =125 fi g7 . gate charge characteristics fig8 . typical capacitances vs. v ce 0 q g 0. 2 0.4 uc 0.7 0 v ce 10 2 0 v 35 1 0 nf 1 c 0 .1 25 v 15 v ge 0 fig5. switching times vs. collector c urrent fig6 . switching times vs. gate resistor 0 i c 60 a 140 1000 n s 100 t 1 0 0 rg 20 4 0 v ge = 15v v cc =600v r g =15 t j =125 t d(off) t d( on ) t f t r t d(off) t d( on ) t r v ge = 15v v cc =600v i c =75 a t j =125 v cc =600v i c =75a t j = 25 v ge =0v f=1mhz c ies c oes c res e off s - m08 6 www. 21yangjie .com rev.2.0, 27 - may - 17 4
preliminary m g 75 hf 1 2 c 1 compl i ant rohs fig11 . transient thermal impedance of igbt fig12 . transient thermal impedance of diode 10 - 4 10 - 3 10 - 2 10 - 1 s 1 1 k/w 10 - 2 10 - 3 z thjc 10 - 4 fig9. rated current vs. t c fig10 . diode forward characteristics 0 t c 50 100 175 150 a 75 i c 0 0 v f 1 2 v 3.5 150 a 75 i f 0 t j =150 v ge 15v t j =25 t j =125 duty 0.5 0.2 0.1 0.05 single plus 1 k/w 10 - 2 10 - 3 z thjc 10 - 4 10 - 4 10 - 3 10 - 2 10 - 1 s 1 duty 0.5 0.2 0.1 0.05 single plus s - m08 6 www. 21yangjie .com rev.2.0, 27 - may - 17 5
preliminary m g 75 hf 1 2 c 1 compl i ant rohs package outline information case : c1 dimensions in mm y j s - m08 6 www. 21yangjie .com rev.2.0, 27 - may - 17 6
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